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Solar Grade LPCVD TubeLPCVD Diffusion Furnace Tubes: Product Description and Technical OverviewProduct OverviewLPCVD (Low-Pressure Chemical Vapor Deposition) diffusion furnace tubes are advanced thermal processing systems designed for precise thin-film deposition and dopant diffusion in semiconductor, photovoltaic, and microelectronics manufacturing. These systems operate under controlled low-pressure environments to enhance film uniformity and process efficiency12. Key SpecificationsProcess Compatibility:Supports Poly-Si, Si₃N₄, TEOS, PSG, LTO, SIPOS, and other thin-film deposition.
Control System: Utilizes industrial-grade PLCs for precise temperature, pressure, and gas flow regulation5.
.Material Compatibility: Constructed with high-purity quartz or SiC-coated materials to withstand corrosive gases and high temperatures
Applications
Core AdvantagesHigh Thermal Stability: Maintains uniform temperature profiles for repeatable process results Versatile Process Integration: Compatible with LPCVD, PECVD, and rapid thermal annealingworkflows
Material Deposition Capabilities
Service and Customization
This system is widely adopted in high-volume fabs and R&D facilities for its precision, scalability, and compatibility with advanced semiconductor
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LPCVD Tube Product Specification Function & Application Designed specifically for Low Pressure Chemical Vapor Deposition (LPCVD) processes in semiconductor fabrication^.35. Primarily used for depositing thin films (e.g., polysilicon, silicon nitride, oxide) onto substrates like silicon wafers under vacuum and controlled high-temperature conditions^.16. Ensures consistent process performance and high film uniformity^.6. Construction & Material Typically manufactured from high-purity, high-temperature resistant quartz or silicon carbide (SiC)**^.16. Engineered as a precision hollow section, defined by its strict Outside Diameter (O.D.) and Wall Thickness (W.T.) specifications^.28. Features a tubular, round cross-section optimized for horizontal mounting within LPCVD furnaces^.1. Key Features & Benefits High-Temperature Stability: Maintains structural integrity and process consistency at extreme operating temperatures required for thin-film deposition^.16. Thermal Uniformity: Precise engineering minimizes temperature gradients across the tube length, critical for achieving uniform film thickness and properties on wafers^.6. Chemical Resistance: Resists corrosion from precursor gases and byproducts encountered in LPCVD processes^.1. Plasma Clean Compatibility: Designed for in-situ plasma cleaning systems to remove residues effectively, improving particle control and extending operational uptime^.1. Reduced Breakage Risk: Robust design and material selection minimize the risk of tube failure during operation or maintenance^.1. Optimized Gas Flow: Geometry conducive to achieving desired thermal flow distribution and gas reactant flow within the furnace^.6. Dimensions & Specifications (Typical Range) Outside Diameter (O.D.): Customizable, common sizes align with furnace design (referenced range: up to 6" O.D. for similar high-precision tubes)**^.8. Wall Thickness (W.T.): Specified based on pressure, temperature, and mechanical requirements^.2. Length: Tailored to fit specific furnace models and boat configurations^.16. Note: Exact dimensions are furnace/model-specific and must be specified.^.28. Performance Enhancement Integration with advanced CFD (Computational Fluid Dynamics) analysis optimizes thermal management and gas distribution, further improving wafer-level film uniformity and reducing defects^.6. Notes on Specification: The specification synthesizes core attributes from the search results, focusing on the LPCVD context^.12. Material specification (Quartz/SiC) and exact dimensions are critical purchase variables and depend heavily on the specific furnace and process requirements. ** signifies common materials inferred from context 16 and general industry knowledge; the referenced O.D. range 8 is indicative of precision industrial tubing but actual LPCVD tube size is furnace-dependent. LPCVD Tube Product Parameters Based on the provided information, here are the key technical specifications for an LPCVD tube in English. These parameters reflect typical characteristics derived from industry sources. Outside Diameter (O.D.): Customizable, with sizes ranging up to 6 inches (152.4 mm), compatible with wafer handling systems 23. Wall Thickness (W.T.): Precision-engineered for optimal thermal and mechanical performance, typically specified based on application requirements 6. Material: Constructed from high-purity quartz for excellent chemical resistance and high-temperature stability 15. Temperature Range: Supports operation from 300°C to 1200°C, ensuring suitability for various deposition processes like polysilicon or silicon nitride films 23. Vacuum Specifications: Achieves a base vacuum of up to 8 × 10^{-1} Pa, with controlled pressure ranges between 1 Pa and 1000 Pa for uniform film growth 2. Pressure Control: Features closed-loop pressure management for stable low-pressure environments 5. Thermal Uniformity: Maintains ±0.5°C precision in controlled zones to minimize film thickness variations 5. Film Uniformity: Delivers ≤ ±2% thickness uniformity within-wafer, wafer-to-wafer, and lot-to-lot for consistent quality 2. Substrate Compatibility: Accommodates wafer sizes from 2 inches (50.8 mm) to 6 inches (152.4 mm), with horizontal mounting configurations 23. Plasma Cleaning Compatibility: Designed for in-situ cleaning to reduce particulate contamination and enhance process reliability 1. Length and Configuration: Customizable to fit specific furnace setups, often optimized with computational fluid dynamics (CFD) for efficient gas flow 56. Note: Actual specifications may vary by manufacturer and furnace model; customization is common for application-specific needs |
