Semiconductor Grade LPCVD Tube - Product Specification
Optimized for low-pressure chemical vapor deposition processes in semiconductor manufacturing, this high-purity tube ensures contamination control and thermal stability in advanced IC fabrication14.
Core Features
Material & Construction
Ultra-High Purity Quartz: SiO₂ ≥99.99% with metal impurities <0.1 ppb, preventing wafer contamination46.
Precision Geometry: Uniform inner diameter (ID 200-300mm standard) for consistent gas flow dynamics14.
Thermal Shock Resistance: Laser-fused joints withstand ΔT ≥1000°C during rapid thermal cycling17.
Performance Specifications
| Parameter | Value |
|---|
| Operating Temperature | 300°C–800°C (max 1200°C) 14 |
| Vacuum Compatibility | ≤10⁻⁶ Pa (base pressure) 4 |
| Gas Purity | Supports NF₃/NH₃ etching & deposition gases12 |
| Particle Generation | <0.1 particles/cm² per cycle1 |
Critical Process Advantages
In-Situ Cleaning: Compatible with NF₃ plasma and thermal shock protocols for reduced downtime12.
Surface Integrity: Fire-polished interior (Ra ≤0.5μm) minimizes particle adhesion46.
Chemical Resistance: Sustains HF/HCl/ammonia purge cycles without degradation27.
Applications
Thin Film Deposition: Silicon/nitride/polysilicon layers for 300mm wafer processing14.
Etch Systems: In-situ chamber cleaning for particle reduction in LPCVD tools12.
Diffusion Processes: Doping and oxidation in vertical furnace stacks47.
Customization Options
Diameter/Length: ID 150–450mm × 1,000–3,000mm configurations4.
Gas Inlet Ports: Radial/axial nozzle layouts for uniform gas distribution1.
Metrology Integration: Optional ports for real-time thickness monitoring sensors4.
⚠️ Operational Guidelines
Cleaning Protocol: Mandatory NF₃ plasma clean after nitride deposition runs12.
Thermal Ramp Rate: Limit ≤10°C/min above 600°C to prevent micro-cracking7.
Handling: Use quartz-compatible fixtures during installation/removal4.
Certified to SEMI F47 standards for ≤5 ppb metallic contamination
