Semiconductor Grade Quartz Rod - Technical Specifications
Ultra-high-purity fused silica rods engineered for critical semiconductor manufacturing processes, ensuring contamination-free performance under extreme thermal and chemical conditions13.
Core Properties
Extreme Material Purity:
99.9995% SiO₂ composition with total metallic impurities ≤0.1 ppm, preventing wafer contamination25.
Thermal Stability:
Sustains 1,200°C operational temperatures and rapid thermal shocks (ΔT >900°C) without devitrification34.
Radiation Resistance:
Low OH⁻ content (<5 ppm) minimizes UV-induced degradation in lithography systems17.
Precision Specifications
Parameter | Specification |
---|
Diameter | 2–50 mm ±0.05 mm tolerance34 |
Length | ≤1,500 mm (customizable)46 |
Surface Roughness | Optical polish (Ra ≤0.4 μm)16 |
Thermal Expansion | 5.5×10⁻⁷/℃ (20–1,000°C)46 |
Light Transmission | >92% @ 193 nm DUV wavelength17 |
Key Advantages
Contamination Control:
Near-zero alkali metal content (Na+K <1 ppm) eliminates ionic contamination in wafer fabs89.
Plasma Resistance:
Exceptional etch resistance against fluorine/chlorine plasmas in etching/deposition chambers110.
Mechanical Integrity:
Mohs hardness 7 with flexural strength >70 MPa for robotic handling reliability46.
Primary Applications
Single Crystal Growth:
Bridging rods for CZ silicon pullers, ensuring ultra-low dislocation density39.
Photolithography Systems:
EUV mirror substrates and alignment fixtures requiring nanoscale stability17.
Etch/Deposition Hardware:
Electrode shafts and plasma confinement rings in 3nm-node process tools210.
⚠️ Critical Handling Protocols
Compliance: SEMI F57 certified; RoHS/REACH compliant. Traceability lot numbers provided5